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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1670 DESCRIPTION *Collector-Emitter Breakdown Voltage: V(BR)CEO= 100V(Min) *High DC Current Gain: hFE= 1000( Min.) @ IC= 10A *Low Collector Saturation Voltage: VCE(sat)= 1.5V(Max)@ IC= 10A APPLICATIONS *For low speed high current switching industrial use. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @Ta=25 w w scs .i w VALUE 150 100 8 10 20 1 3.5 UNIT V .cn mi e V V A A A PC Collector Power Dissipation @TC=25 TJ Tstg Junction Temperature Storage Temperature 65 150 -55~150 W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SD1670 TYP. MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 10A; IB= 25mA 1.5 V VBE(sat) ICBO Base-Emitter Saturation Voltage IC= 10A; IB= 25mA 2.0 V A Collector Cutoff Current VCB= 100V ; IE= 0 10 IEBO hFE Emitter Cutoff Current VEB= 5V; IC= 0 IC= 10A; VCE= 2V 1000 3.0 mA DC Current Gain 30000 Switching Times ton tstg tf Turn-on Time Storage Time Fall Time hFE-1 Classifications M 1000-3000 L w ww K 4000-10000 scs .i J 8000-30000 VCC 50V, RL= 5, IC= 10A; IB1= -IB2= 25mA, .cn mi e 1.0 s s s 5.0 2.0 2000-5000 isc Websitewww.iscsemi.cn 2 |
Price & Availability of 2SD1670
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